jiangsu changjiang electronics technology co., ltd to-92 plastic-encapsulate transistors BC237 / bc238 / bd239 transistor (npn) features amplifier dissip ation npn silicon maximum ratings (t a =25 unless otherwise noted) symbol parameter v alue unit v ceo collector-emitter voltage BC237 bc23 8/23 9 45 25 v v ebo emitter-base volt age BC237 bc238/239 6 5 v i c collector curren t -continuous 0.1 a p c collector power dissipation 350 mw r ja thermal resistance, junction to ambient 357 /w r jc thermal resistance, junction to case 125 /w t j junction temperature 150 t stg storage temperature -55 ~ 150 to-92 1. collector 2. base 3. emitter www.cj-elec.com 1 d , aug ,201 7 ordering inform a t ion part nu mb er pack ag e packin g meth o d pack quantity t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box BC237 BC237 -ta equivalent circuit solid dot=green molding compound device, ///, . BC237,bc238,bc239 ,! - . if none,the normal device 1 BC237 xxx t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc238 bc238 -ta t o-92 bulk 1000pcs/bag t o -92 t ape 2000pcs/box bc239 bc239 -ta 1 bc238 xxx 1 bc239 xxx
www.cj-elec.com d0aug0 & a t =25 unless otherwise specified parameter symbol test conditions min typ max unit collector -b ase breakdown voltage v (br)cbo i c =100 a, i e =0 BC237 bc238/23 9 50 30 v collector-emitter b r eakdown voltage v (br)ceo i c =2ma, i b =0 BC237 bc238/23 9 45 25 v emitter-bas e b reakdown voltage v (br)ebo i e =100 a, i c =0 BC237 bc238/23 9 6 5 v collector cu t-off current i cbo v ce =50v, v be =0 BC237 v cb =30v,i e =0 bc238/239 15 na h fe(1) v ce =5v, i c =10 a b c 237a BC237b/238b BC237c/238c/239c 90 150 270 h fe(2) v ce =5v, i c =2m a BC237 bc239 BC237a BC237b/238b BC237c/238c/239c 120 120 120 200 380 800 800 220 460 800 dc curren t g ain h fe(3) v ce =5v, i c =100ma bc23 7a bc23 7b/238b BC237c/238c/239c 120 180 300 collector -emitter satu ration voltage v ce(sat ) i c =10ma, i b =0.5ma bc23 7/238/2 39 i c =100ma, i b =5ma BC237/239 bc238 0.2 0.6 0.8 v base-emitte r satu ration voltage v be(sat) i c =10ma,i b =0.5 ma i c =100ma,i b =5ma 0.83 1.05 v base-emitter volt age v be v ce =5v, i c =0.1ma v ce =5v, i c =2ma v ce =5v, i c =100ma 0.55 0.5 0.83 0.7 v tra n sition frequency f t v ce =3v, i c =0.5ma,f= 100mhz bc23 7 bc238 bc239 v ce =5v, i c =10ma,f=100mhz bc23 7 bc238 bc239 150 150 150 100 120 140 200 240 280 mhz collector o utput capacitance c ob v cb =10v, i e =0, f=1mhz 4.5 pf emitter-bas e capacitance c ib v eb =0.5v, i c =0, f=1mhz 8 pf noise figu re nf v ce =5v, i c =0.2ma, f=1khz, rs=2k ? b c239 v ce =5v, i c =0.2ma, f=1khz, rs=2k ? , f=200hz BC237 bc238 bc239 2 2 2 2 4 10 10 4 db
min max min ma x a 3.300 3.700 0.130 0.146 a1 1.100 1.400 0.043 0.055 b 0.380 0.550 0.015 0.022 c 0.360 0.510 0.014 0.020 d 4. 300 4.700 0.169 0.185 d1 3.430 0.135 e 4.300 4.700 0.169 0.185 e e1 2.440 2.640 0.096 0.104 l 14.100 14.500 0.555 0.571 1.600 0.063 h 0.000 0.380 0.000 0.015 symbol dimensions in millimeters dimensions in inches 1.270 typ 0.050 typ to-92 package outline dimensions to-92 suggested pad layout www.cj-elec.com 3 d , ,201
to-92 7 d s h d q g 5 h h o z z z f m h o h f f r p 4 d,aug,2017
|
